Rutronik offers Vishay N-Channel MOSFETs with high power density
Vishay’s SiSS12DN 40V N-Channel MOSFETs are designed to improve power density and efficiency in power conversion topologies. Packaged in a compact 3.3 x 3.3mm PowerPAK 1212-8S package, they offer the lowest output capacitance (Coss) in the sub-2mΩ class.
The SiSS12DN MOSFET features a low on-resistance (RDS(ON)) of 1.98mΩ at 10V to minimize conduction losses. In addition, the device features a low output capacitance (Coss) of 680pF and an optimized gate charge (Qg) of 28.7nC, reducing switching-related power losses.
TrenchFET Gen IV power MOSFETs take up 65% less printed circuit board (PCB) space than similar solutions in a 6x5mm package, enabling higher power density. They are 100% RG and UIS tested, RoHS compliant and halogen free.
Applications for this N-Channel MOSFET include synchronous rectification in AC/DC power supplies; primary and secondary side switching in DC/DC converters for telecom, server and medical equipment; voltage regulation in servers and telecom equipment Half-bridge power stages and buck-boost converters; OR-ing functions in telecom and server power supplies; power stages for switched capacitor or switchgear converters; motor drive control in power tools and industrial equipment; and batteries Manages battery protection and charging in the module.
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